Samsung announced today (opens in a new tab) that it had started mass production of its presumably a 236-layer three-dimensional NAND memory, which the company brands as its 8th generation V-NAND. The new ICs provide a transfer speed of 2400 MTps, and when combined with an advanced controller can enable client-grade SSDs with a transfer speed of over 12 GB/s.
The new 8th generation V-NAND device has a capacity of 1TB (128GB), which Samsung calls the highest bit density in the industry without disclosing the IC size or the actual density. The IC also boasts a data transfer rate of 2400 MTps, which is vital for the best SSDs featuring a PCIe 5.0 x4 interface that will offer a 12.4 GB/s (or more!) when paired with an appropriate controller.
Samsung claims that the next generation of its 3D NAND memory will deliver 20% higher productivity per wafer than its existing flash ICs of the same capacity, lowering the company’s costs (provided the same yields), this which potentially means cheaper SSDs. .
Meanwhile, the company does not say anything about the architecture of the device, but based on the image provided, we assume that we are talking about a dual-plane 3D NAND integrated circuit.
“As market demand for denser, higher-capacity storage pushes for more V-NAND layers, Samsung has adopted its advanced 3D scaling technology to reduce area and height, while avoiding cell-to-cell interference that normally occurs with reduction,” said SungHoi Hur, Executive Vice President of Flash Product & Technology at Samsung Electronics. “Our eighth-generation V-NAND will help us meet the growing market demand and better position ourselves to provide more differentiated products and solutions that will underpin future storage innovations.”
Samsung hasn’t announced any actual products based on its 8th generation V-NAND memory, but we can assume that the first devices will respond to customer applications.